953805

Erratum: Ultra low resistance ohmic contacts to n-GaAs

Stall, Rick ; Wood, C.E.C. ; Board, K. ; Eastman, L.F.

16

1

1980

45

III-V semiconductors; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; Ge/GaAs heterojunction system; Schottky barrier height; doping levels; n-GaAs; ohmic contacts;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19800036

4243822