DocumentCode
953805
Title
Erratum: Ultra low resistance ohmic contacts to n-GaAs
Author
Stall, Rick ; Wood, C.E.C. ; Board, K. ; Eastman, L.F.
Volume
16
Issue
1
fYear
1980
Firstpage
45
Keywords
III-V semiconductors; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; Ge/GaAs heterojunction system; Schottky barrier height; doping levels; n-GaAs; ohmic contacts;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800036
Filename
4243822
Link To Document