DocumentCode :
953857
Title :
High Power Density Thin Film Resistors
Author :
Faith, Thomas J., Jr.
Author_Institution :
RCA, Princeton, NJ
Volume :
11
Issue :
4
fYear :
1975
fDate :
12/1/1975 12:00:00 AM
Firstpage :
273
Lastpage :
281
Abstract :
Stability characteristics of nickel-chromium thin film resistors have been measured for power densities ranging up to 4500 W/in2Resistance change was found to depend on resistor temperature, sheet resistance and substrate Wpe. For 220 \\Omega /sq films the time for a one percentresistance change, t1 \\approx 3.8 X 10-14exp(16820/T), where t1is in h and T is mean resistor temperature in °K. Resistors with 4 X 10-5in2area, deposited on glazed alumina, increase 0.04°C for each W/in2power density. Consequently, for room temperature ambient t1 \\approx ,1.7X 105h (20 years)at 2000 W/in2(0.08W). Resistors on as-fired alumina run cooler (0.01°C/W/in2) and therefore have higher values of t1Top-hat trimmed resistors developed hot spots which caused failures at ~1000 W/in2. Modified trim configurations were tested and shown to avoid these failures.
Keywords :
Chromium alloys/compounds, devices; Nickel alloys/compounds, devices; Thin-film resistors; Density measurement; Electrical resistance measurement; Power measurement; Resistors; Stability; Substrates; Temperature dependence; Temperature distribution; Testing; Transistors;
fLanguage :
English
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
0361-1000
Type :
jour
DOI :
10.1109/TPHP.1975.1135076
Filename :
1135076
Link To Document :
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