• DocumentCode
    953922
  • Title

    Temperature dependence of storage time in silicon p+-n-n+ switching diodes and reduction of harmonic distortion

  • Author

    Rosen, Arye ; Martinelli, Ramon U. ; Caulton, Martin

  • Author_Institution
    RCA Laboratories, Princeton, USA
  • Volume
    16
  • Issue
    2
  • fYear
    1980
  • Firstpage
    66
  • Lastpage
    68
  • Abstract
    Using the reverse-recovery technique, storage times in p+-n-n+ diodes have been measured as a function of temperature. In all cases the effective lifetime for injected charge increases with increasing temperature within the interval 0 to 180°C. This result was found to reduce second-harmonic distortion in p+-n-n+ switches by as much as 6 dB at 2.5 MHz.
  • Keywords
    carrier lifetime; electric distortion; semiconductor diodes; semiconductor switches; Si; effective lifetime; harmonic distortion; injected charge; p+-n-n+ switching diodes; reverse recovery technique; storage time; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800049
  • Filename
    4243837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953922