Title :
Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy
Author :
Cho, Andrew Y. ; Casey, H.C. ; Radice, C. ; Foy, P.W.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
The effect on threshold current density Jth of the use of an air-lock sample-exchange mechanism, substrate preparation and Al source purity was investigated for GaAs-Al0.27 Ga0.73 As double-heterostructure lasers grown by molecular-beam epitaxy (m.b.e.). The conditions necessary to prepare m.b.e. wafers that give Jth as low as for wafers prepared by liquid-phase epitaxy (Jth ¿ 1 × 103 A/cm2 for an active layer thickness of 0.1 ¿m) are summarised.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; GaAs-Al0.27Ga0.73As; MBE; air lock sample exchange mechanism; double heterostructure lasers; molecular beam epitaxy; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800053
