DocumentCode :
954113
Title :
Preparation of superconducting weak links in molybdenum films by ion implantation
Author :
Harris, E.P.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York
Volume :
11
Issue :
2
fYear :
1975
fDate :
3/1/1975 12:00:00 AM
Firstpage :
785
Lastpage :
788
Abstract :
We have implanted patterns of N+ and/or S+ ions into Mo films so as to produce structures in which two heavily-doped Mo regions with relatively high transition temperature Tcare connected by a short ( \\sim 1\\mu m) lightly-doped Mo region with lower transition temperature T\´c. Near T\´cthe lightly-doped region acts as a weak link between the heavily doped regions and passes a supercurrent having an oscillatory "diffraction pattern" dependence on magnetic field similar to that of Josephson tunnel junctions.
Keywords :
Ion implantation; Josephson devices; Molybdenum materials/devices; Bridges; Conductivity; Helium; Implants; Impurities; Ion implantation; Resists; Substrates; Superconducting films; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1975.1058606
Filename :
1058606
Link To Document :
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