Title :
37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode
Author :
Wei-kuo Huang ; Shou-chian Huang ; Hsiao-wen Chung ; Yue-ming Hsin ; Jin-Wei Shi ; Yung-Chung Kao ; Jenn-ming Kuo
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
fDate :
6/1/2006 12:00:00 AM
Abstract :
In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55-mum wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dBmiddotOmega. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; photodiodes; semiconductor growth; 1.55 mum; 30 GHz; 37 GHz; InP-InGaAs; InP-InGaAs heterojunction bipolar transistor amplifier; evanescently coupled photodiode; metal-organic chemical vapor deposition; molecular beam epitaxy; monolithic integration; optoelectronic integrated circuit; photoreceiver; transimpedance; Application specific integrated circuits; Bandwidth; Chemical vapor deposition; Coupling circuits; Heterojunction bipolar transistors; Indium phosphide; Integrated optoelectronics; Monolithic integrated circuits; Optoelectronic devices; Photodiodes; Evanescently coupled photodiode (ECPD); InP heterojunction bipolar transistor (HBT); evanescently coupled photodiode heterojunction bipolar transistor (ECPD/HBT); optoelectronic integrated circuit (OEIC);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.876733
