Title :
Electron-Beam-Induced Currents in Simple Device Structures
Author :
Galloway, Kenneth F. ; Leedy, Kathryn O. ; Keery, William J.
Author_Institution :
National Bureau of Standards,Washington,DC
fDate :
9/1/1976 12:00:00 AM
Abstract :
Electron-beam-induced current (EBIC) in semiconductor devices produced by the electron beam of a scanning electron microscope (SEM) can be used to image sub-surface device features and to measure certain material parameters, This paper presents a simple method of calculation for estimating the magnitude of EBIC signals. EBIC signals from silicon p-n junction diodes are compared with the results of the calculation, The application of EBIC to more complicated device structures is discussed.
Keywords :
Electron-beam applications; Scanning electron microscopy; Semiconductor device measurements; Semiconductor materials measurements; Circuits; Conducting materials; Electron beams; Electronic components; NIST; P-n junctions; Scanning electron microscopy; Semiconductor diodes; Semiconductor materials; Silicon;
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
DOI :
10.1109/TPHP.1976.1135138
