Title :
Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 ¿m wavelength
Author :
Lee, T.P. ; Burrus, C.A. ; Dentai, A.G. ; Ogawa, Koichi
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Small-area Zn-diffused homojunction InGaAs/InP p-i-n photodetectors for wavelengths up to 1.65 ¿m have been fabricated in a back-illuminated configuration. The dark current is 5 nA and the capacitance is 0.3 pF at ¿10 V bias; the quantum efficiency is 65% without a.r. coatings. As 1.31 ¿m detectors in a p-i-n/f.e.t. receiver preamplifier, the diodes have provided a receiver sensitivity of ¿46.7 dBm at 45 Mb/s and ¿36 dBm at 274 Mb/s for 10¿9 error rate.
Keywords :
III-V semiconductors; indium compounds; optical communication equipment; photodiodes; 1.31 micron wavelength; 10-9 error rate; 274 Mb/s lightwave receivers; 45 Mb/s lightwave receivers; Zn-diffused homojunction InGaAs/InP p-i-n photodetectors; back illuminated photodiodes; characteristics; fabrication; optical fibre receivers; p-i-n/f.e.t. receiver preamplifier; performance; receiver sensitivity; small area photodiodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800113
