Title :
InGaAs avalanche photodiode with InP p-n junction
Author :
Kanbe, Hiroshi ; Susa, Nobuhiko ; Nakagome, Hiroshi ; Hiroaki, Ando
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A new InGaAs avalanche photodiode structure that has an InGaAs light absorption region and InP avalanche multiplying region is proposed. A dark-current density of 2.2 × 10¿3 A/cm2 at 90% of breakdown voltage and a multiplication factor of 45 were obtained for the new structure diode fabricated from a liquid-phase epitaxially grown wafer.
Keywords :
III-V semiconductors; avalanche photodiodes; InGaAs avalanche photodiode; InP p-n junction; LPE; avalanche multiplying region; breakdown voltage; dark current density; light absorption region; multiplication factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800117
