• DocumentCode
    954557
  • Title

    InGaAs avalanche photodiode with InP p-n junction

  • Author

    Kanbe, Hiroshi ; Susa, Nobuhiko ; Nakagome, Hiroshi ; Hiroaki, Ando

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    16
  • Issue
    5
  • fYear
    1980
  • Firstpage
    163
  • Lastpage
    165
  • Abstract
    A new InGaAs avalanche photodiode structure that has an InGaAs light absorption region and InP avalanche multiplying region is proposed. A dark-current density of 2.2 × 10¿3 A/cm2 at 90% of breakdown voltage and a multiplication factor of 45 were obtained for the new structure diode fabricated from a liquid-phase epitaxially grown wafer.
  • Keywords
    III-V semiconductors; avalanche photodiodes; InGaAs avalanche photodiode; InP p-n junction; LPE; avalanche multiplying region; breakdown voltage; dark current density; light absorption region; multiplication factor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800117
  • Filename
    4243913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954557