DocumentCode :
954557
Title :
InGaAs avalanche photodiode with InP p-n junction
Author :
Kanbe, Hiroshi ; Susa, Nobuhiko ; Nakagome, Hiroshi ; Hiroaki, Ando
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume :
16
Issue :
5
fYear :
1980
Firstpage :
163
Lastpage :
165
Abstract :
A new InGaAs avalanche photodiode structure that has an InGaAs light absorption region and InP avalanche multiplying region is proposed. A dark-current density of 2.2 × 10¿3 A/cm2 at 90% of breakdown voltage and a multiplication factor of 45 were obtained for the new structure diode fabricated from a liquid-phase epitaxially grown wafer.
Keywords :
III-V semiconductors; avalanche photodiodes; InGaAs avalanche photodiode; InP p-n junction; LPE; avalanche multiplying region; breakdown voltage; dark current density; light absorption region; multiplication factor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800117
Filename :
4243913
Link To Document :
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