• DocumentCode
    954600
  • Title

    Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

  • Author

    Stall, R.A. ; Wood, C.E.C. ; Kirchner, P.D. ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    16
  • Issue
    5
  • fYear
    1980
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    Deep levels in GaAs grown by molecular-beam epitaxy have been examined. Dependence of both electron and hole trap densities on growth parameters such as growth temperature have been obtained.
  • Keywords
    III-V semiconductors; deep levels; electron traps; gallium arsenide; hole traps; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaAs; MBE; deep levels; electron trap densities; growth temperature; hole trap densities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800122
  • Filename
    4243918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954600