DocumentCode
954605
Title
On the Interpretation of Noise in Thick-Film Resistors
Author
Ringo, J.A. ; Stevens, E.H. ; Gilbert, D.A.
Author_Institution
Washington State University,Pullman, WA
Volume
12
Issue
4
fYear
1976
fDate
12/1/1976 12:00:00 AM
Firstpage
378
Lastpage
380
Abstract
Noise in thick-film resistors is interpreted by comparison to experimental and theoretical results previously reported for noise in metals and semiconductors. This comparison provides an explanation for the observed dependence of noise on the thick-film-resistor geometry and the 100-fold increase-in noise amplitude over that of metals and semiconductors This comparison indicates that mobile-charge interactions with traps are an inherent feature of charge transport in thick-film resistors.
Keywords
Noise; Thick-film resistors; Conducting materials; Conductivity; Geometry; Inorganic materials; Noise level; Resistors; Semiconductor device noise; Semiconductor materials; Sheet materials; Surface resistance;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1976.1135147
Filename
1135147
Link To Document