Title :
A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells
Author :
Xu, Haifeng ; O, Kenneth K.
Author_Institution :
Univ. of Florida, Gainesville
Abstract :
A 31.3-dBm 900-MHz bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB and isolation of 29 dB is demonstrated. The switch utilizes a floating-body technique, feed-forward capacitors, and 3-stack 3.3-V MOSFETs with 0.26-mum sub-design-rule (SDR) channel length. Using these, a 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB, and isolation of 24 dB is also demonstrated. The power handling capability is limited by an abrupt output power drop before reaching the normal 1-dB compression point. The circuits are implemented in the UMC 130-nm mixed-mode triple-well CMOS process.
Keywords :
CMOS integrated circuits; MOSFET; floating point arithmetic; mixed analogue-digital integrated circuits; MOSFET; UHF T/R switch; UMC; bulk CMOS T/R switch; feed forward capacitors; floated p-wells; floating body technique; frequency 2.4 GHz; frequency 900 MHz; insertion loss; loss 0.5 dB; loss 0.8 dB; loss 1.0 dB; loss 1.2 dB; mixed mode CMOS process; power handling capability; size 130 nm; stacked transistors; sub-design-rule channel length; triple well CMOS process; voltage 3.3 V; CMOS process; Degradation; Insertion loss; Leg; MOSFETs; Propagation losses; Radio frequency; Switches; Switching circuits; Voltage control; CMOS integrated circuit; floating-body; high power; radio frequency (RF); switch;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.907201
