• DocumentCode
    954896
  • Title

    High performance millimetre Ge-GaAs mixer diode for low l.o. power applications

  • Author

    Christou, Alex ; Anderson, W.T. ; Davey, J.E. ; Bark, M.L. ; Anand, Y.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    16
  • Issue
    7
  • fYear
    1980
  • Firstpage
    254
  • Lastpage
    256
  • Abstract
    Epitaxial Ge/GaAs low-barrier-height Ti-Mo-Au Schottkybarrier diodes exhibit a noise figure of 6.5 dB at 36 GHz and at 0.75 mW of local oscillator (l.o.) power. These diodes represent significant improvement over standard GaAs-Ti diodes at low power levels.
  • Keywords
    Schottky-barrier diodes; electron device noise; gallium arsenide; mixers (circuits); semiconductor technology; solid-state microwave devices; 0.75 mW local oscillator power microwave mixer diodes; EHF; MM wave mixer diodes; epitaxial Ge/GaAs mixer diodes; low barrier height Ge/GaAs-Ti Schottky barrier diodes; low noise figure diodes; noise figure 6.5 dB at 36 GHz;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800187
  • Filename
    4243951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954896