Title :
Cutoff frequency of a graded channel f.e.t.
Author :
Malhi, S.D.S. ; Salama, C.A.T.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
Closed-form analytical expressions are derived for the transconductance, input gate capacitance and cutoff frequency of a graded-channel f.e.t. taking velocity saturation effects into consideration. The graded-channel profile is shown to result in a higher cutoff frequency than an equivalent structure with uniform doping profile.
Keywords :
field effect transistors; semiconductor device models; cutoff frequency; graded channel FET; input gate capacitance; semiconductor device models; transconductance; velocity saturation effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800192
