• DocumentCode
    954940
  • Title

    Cutoff frequency of a graded channel f.e.t.

  • Author

    Malhi, S.D.S. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    16
  • Issue
    7
  • fYear
    1980
  • Firstpage
    261
  • Lastpage
    263
  • Abstract
    Closed-form analytical expressions are derived for the transconductance, input gate capacitance and cutoff frequency of a graded-channel f.e.t. taking velocity saturation effects into consideration. The graded-channel profile is shown to result in a higher cutoff frequency than an equivalent structure with uniform doping profile.
  • Keywords
    field effect transistors; semiconductor device models; cutoff frequency; graded channel FET; input gate capacitance; semiconductor device models; transconductance; velocity saturation effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800192
  • Filename
    4243956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954940