Title :
Role of substrate in electrical properties of GaAs implanted layers
Author :
Martin, G.M. ; Berth, M. ; Venger, C.
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil Brévannes, France
Abstract :
The variation of implantation efficiency in different semi-insulating GaAs materials is shown to be correlated with he purity of the starting substrate, i.e. its Cr concentration and more especially its value of ND¿NA (shallow levels). This last value appears to be a key parameter in the electrical properties of implanted layers.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; semiconductor doping; Cr concentration; GaAs implanted layers; ND-NA value effects; electrical properties; ion implantation efficiency variation; semi-insulating GaAs materials; substrate role;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800203
