• DocumentCode
    955157
  • Title

    Characterisation of multiple-scan electron beam annealing method

  • Author

    McMahon, Richard A. ; Ahmed, Hameeza ; Dobson, R.M. ; Speight, J.D.

  • Author_Institution
    Cambridge University, Engineering Department, Cambridge, UK
  • Volume
    16
  • Issue
    8
  • fYear
    1980
  • Firstpage
    295
  • Lastpage
    297
  • Abstract
    Beam power per unit area and exposure time are the predominant factors in defining implant anneal conditions for the multiple scan electron beam annealing technique. A theoretical analysis is presented which agrees with experimental results. Carrier concentration profiles confirm that the implant becomes electrically active without diffusion.
  • Keywords
    annealing; electron beam applications; ion implantation; semiconductor technology; beam power per unit area; experimental results; exposure time; implant anneal conditions; ion implanted semiconductor annealing; multiple scan electron beam anneal technique; theoretical analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800215
  • Filename
    4243980
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955157