Title :
Characterisation of multiple-scan electron beam annealing method
Author :
McMahon, Richard A. ; Ahmed, Hameeza ; Dobson, R.M. ; Speight, J.D.
Author_Institution :
Cambridge University, Engineering Department, Cambridge, UK
Abstract :
Beam power per unit area and exposure time are the predominant factors in defining implant anneal conditions for the multiple scan electron beam annealing technique. A theoretical analysis is presented which agrees with experimental results. Carrier concentration profiles confirm that the implant becomes electrically active without diffusion.
Keywords :
annealing; electron beam applications; ion implantation; semiconductor technology; beam power per unit area; experimental results; exposure time; implant anneal conditions; ion implanted semiconductor annealing; multiple scan electron beam anneal technique; theoretical analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800215
