• DocumentCode
    955159
  • Title

    CMOS LC-oscillator phase-noise analysis using nonlinear models

  • Author

    Magierowski, Sebastian K. ; Zukotynski, Stefan

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Calgary, Alta., Canada
  • Volume
    51
  • Issue
    4
  • fYear
    2004
  • fDate
    4/1/2004 12:00:00 AM
  • Firstpage
    664
  • Lastpage
    677
  • Abstract
    In this paper, a second-order stochastic differential equation is used as a tool for the analysis of phase noise in a submicron CMOS LC oscillator. A cross-coupled topology typical of integrated CMOS designs is considered. Nonlinear limiting and mobility degradation effects in the circuit are modeled and used to predict the statistics of the random amplitude and phase deviations in terms of design variables. Assuming Gaussian noise disturbances and describing the phase noise as a random diffusion process, the average phase-noise power spectrum is derived and its accuracy verified with measurement and simulation results. Calculations for phase noise arising from stationary tank noise, nonstationary channel thermal noise, and flicker noise are discussed. The analysis is used to emphasize the fundamental power/performance tradeoff associated with compensation of tank losses via adjustments in the power supply and device size.
  • Keywords
    Gaussian noise; integrated circuit design; nonlinear differential equations; phase noise; radiofrequency oscillators; CMOS LC-oscillator phase-noise analysis; CMOS voltage-controlled oscillator; Gaussian noise disturbances; cross-coupled topology; flicker noise; integrated CMOS designs; nonlinear models; nonlinear stochastic analysis; nonstationary channel thermal noise; nonstationary noise; oscillator noise; phase deviations; phase noise; radio-frequency oscillators; random amplitude; second-order stochastic differential equation; stationary tank noise; sub-micron CMOS LC oscillator; 1f noise; Circuit topology; Degradation; Differential equations; Oscillators; Phase noise; Predictive models; Semiconductor device modeling; Statistics; Stochastic resonance;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2004.826209
  • Filename
    1284741