Title :
Micrometre-gate m.e.s.f.e.t.s on laser-annealed polysilicon
Author :
Barnard, J. ; Frey, Jesse ; Lee, K.F. ; Gibbons, J.F.
Author_Institution :
Cornell University, National Research & Resource Facility for Submicron Structures and School of Electrical Engineering, Ithaca, USA
Abstract :
Schottky-barrier field-effect transistors (m.e.s.f.e.t.s) have been fabricated on uniformly doped laser-annealed polycrystalline silicon deposited on a silicon nitride insulator. The devices, which had aluminium Schottky-barrier gates and diffused n+ sources and drains but nonoptimised channel profiles, had about 65% the gm values of similar but optimised devices made on s.o.s. layers. Performance of these devices is considered adequate for certain innovative integrated-circuit technologies.
Keywords :
Schottky gate field effect transistors; field effect integrated circuits; integrated circuit technology; laser beam applications; Al Schottky barrier gates; Si3N4 substrate; characteristics; device performance; fabrication; laser annealed poly Si; micron gate MESFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800216
