• DocumentCode
    955248
  • Title

    Shallow trap spectroscopy in InP:Fe

  • Author

    Bonnafe, J. ; Castagne, M. ; Romestan, J. ; de Murcia, M. ; Fillard, J.P.

  • Author_Institution
    CEES-USTL, Laboratoire de Physique des Solides III, Montpellier, France
  • Volume
    16
  • Issue
    9
  • fYear
    1980
  • Firstpage
    313
  • Lastpage
    315
  • Abstract
    Shallow traps in the range 10¿500 meV are investigated on InP:Fe semi-insulating material. It is shown that some 12 major contributions can be selected; all are related to a monomolecular recombination kinetic implying that recombination takes place through numerous centres. Comparison is made for the deeper traps with d.l.t.s. results.
  • Keywords
    III-V semiconductors; electron traps; indium compounds; iron; photoconductivity; thermally stimulated currents; Czochralski growth; Fe; InP; activation energy; bulk carriers; dark conductivity; extrinsic photoconductivity; impurity levels; photoconductivity spectrum; shallow electron traps; surface lifetime; thermally stimulated conductivity spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800225
  • Filename
    4243991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955248