Title :
Shallow trap spectroscopy in InP:Fe
Author :
Bonnafe, J. ; Castagne, M. ; Romestan, J. ; de Murcia, M. ; Fillard, J.P.
Author_Institution :
CEES-USTL, Laboratoire de Physique des Solides III, Montpellier, France
Abstract :
Shallow traps in the range 10¿500 meV are investigated on InP:Fe semi-insulating material. It is shown that some 12 major contributions can be selected; all are related to a monomolecular recombination kinetic implying that recombination takes place through numerous centres. Comparison is made for the deeper traps with d.l.t.s. results.
Keywords :
III-V semiconductors; electron traps; indium compounds; iron; photoconductivity; thermally stimulated currents; Czochralski growth; Fe; InP; activation energy; bulk carriers; dark conductivity; extrinsic photoconductivity; impurity levels; photoconductivity spectrum; shallow electron traps; surface lifetime; thermally stimulated conductivity spectroscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800225
