Title :
Assessing GaAs high-speed-switching JFET device models: 1- versus 2-dimensional analysis
Author :
Anderson, G.F. ; Current, K.W. ; Forbes, L.
Author_Institution :
University of California, Davis, CA
fDate :
3/1/1979 12:00:00 AM
Abstract :
The general results and conclusions of these researchers and others investigating 1- and 2-dimensional device models for high-speed low-power GaAs switching JFET´s are briefly reviewed and summarized. Guidelines for assessing 1- or 2-dimensional device model adequacy based upon device geometries and dopings are proposed.
Keywords :
Doping; Gallium arsenide; Geometry; Guidelines; Logic circuits; Logic devices; Predictive models; Semiconductor process modeling; Silicon; Solid modeling;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1979.11261
