DocumentCode :
955432
Title :
Temperature Dependence of Junction Transistor Parameters
Author :
GÄrtner, Wolfgang W.
Author_Institution :
Signal Corps Eng. Labs., Fort Monmouth, N.J.
Volume :
45
Issue :
5
fYear :
1957
fDate :
5/1/1957 12:00:00 AM
Firstpage :
662
Lastpage :
680
Abstract :
Based on existing design theories and the known temperature behavior of the semiconductor properties, the temperature variations of transistor characteristics are calculated for four representative types. The results, expressed in terms of four-pole parameters and equivalent circuits, may serve as a guide line in transistor design and temperature compensation of transistor circuits.
Keywords :
Cooling; Electric variables; Encapsulation; Equivalent circuits; Germanium alloys; Material properties; P-n junctions; Semiconductor materials; Temperature dependence; Transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1957.278416
Filename :
4056569
Link To Document :
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