Title :
GaInAsP/InP laser with monolithically integrated monitoring detector
Author :
Iga, Kenichi ; Miller, B.I.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
Monolithic fabrication of a GaInAsP/InP laser with an etched mirror and monitoring detector is reported. Stripegeometry lasers operating at wavelengths of ~1.3 ¿m with threshold current of only 300 mA have been obtained. The monitoring detector on the same InP substrate was confirmed to operate with high sensitivity, comparable with that of an external Ge photodiode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAsP-InP laser; etched mirror; monitoring detector; strip geometry semiconductor junction lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800246
