• DocumentCode
    955498
  • Title

    New 1.6 ¿m wavelength GaInAsP/InP buried heterostructure lasers

  • Author

    Arai, Shigehisa ; Asada, Masahiro ; Suematsu, Yasuharu ; Itaya, Yoshio ; Tanbun-Ek, Tawee ; Kishino, Katsumi

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
  • Volume
    16
  • Issue
    10
  • fYear
    1980
  • Firstpage
    349
  • Lastpage
    350
  • Abstract
    1.6 ¿m wavelength GaInAsP/InP buried heterostructure (b.h.) lasers were fabricated by a new process. The low threshold of 25 mA was obtained for a cavity length of about 300 ¿m and stripe width of 3¿5 ¿m. Room temperature c.w. operation was also obtained with the threshold of 37 mA. Transverse single-mode operation up to more than three times the threshold was obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.6 microns wavelength; CW operation; GaInAsP/InP buried heterostructure lasers; cavity length; threshold current; transverse single mode operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800249
  • Filename
    4244016
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955498