Title :
New 1.6 ¿m wavelength GaInAsP/InP buried heterostructure lasers
Author :
Arai, Shigehisa ; Asada, Masahiro ; Suematsu, Yasuharu ; Itaya, Yoshio ; Tanbun-Ek, Tawee ; Kishino, Katsumi
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
1.6 ¿m wavelength GaInAsP/InP buried heterostructure (b.h.) lasers were fabricated by a new process. The low threshold of 25 mA was obtained for a cavity length of about 300 ¿m and stripe width of 3¿5 ¿m. Room temperature c.w. operation was also obtained with the threshold of 37 mA. Transverse single-mode operation up to more than three times the threshold was obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.6 microns wavelength; CW operation; GaInAsP/InP buried heterostructure lasers; cavity length; threshold current; transverse single mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800249
