DocumentCode
955531
Title
Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver
Author
Leheny, R.F. ; Nahory, R.E. ; Pollack, M.A. ; Ballman, A.A. ; Beebe, E.D. ; DeWinter, J.C. ; Martin, R.J.
Author_Institution
Bell Laboratories, Holmdel, USA
Volume
16
Issue
10
fYear
1980
Firstpage
353
Lastpage
355
Abstract
The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported.
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; photodiodes; InP; integrated InGaAs p-i-n FET photoreceiver;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800252
Filename
4244019
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