Title :
Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver
Author :
Leheny, R.F. ; Nahory, R.E. ; Pollack, M.A. ; Ballman, A.A. ; Beebe, E.D. ; DeWinter, J.C. ; Martin, R.J.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; photodiodes; InP; integrated InGaAs p-i-n FET photoreceiver;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800252
