• DocumentCode
    955619
  • Title

    Controlling deep transient depletion of an m.o.s. capacitor

  • Author

    Pedron, T.P. ; Lanteri, J.P. ; Garrigues, M. ; Urgell, J.J.

  • Author_Institution
    Ecole Centrale de Lyon, Laboratoire d´Electronique, Automatique et Mesures Electriques, Ecully, France
  • Volume
    16
  • Issue
    10
  • fYear
    1980
  • Firstpage
    367
  • Lastpage
    368
  • Abstract
    The transient surface potential ¿s of an m.o.s. capacitor is regulated to a given value ¿0 by controlling the gate voltage. Simultaneously, the oxide voltage drop, depletion layer charge and generation current are measured. We present an application of this circuit to the determination of the deep doping profile in a silicon substrate.
  • Keywords
    doping profiles; metal-insulator-semiconductor structures; surface potential; MOS capacitor; Si substrate; depletion layer charge; doping profile; gate voltage; oxide voltage drop; transient surface potential;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800261
  • Filename
    4244028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955619