Title :
Bipolar transistors with low 1/f noise
Author :
Stoisiek, M. ; Wolf, D. ; Werner, W.
Author_Institution :
Universitÿt Frankfurt am Main, Institut fÿr Angewandte Physik, Frankfurt am Main, West Germany
Abstract :
Bipolar transistors employing low concentration emitter diffusion were obtained which show no current gain fall-off at low current levels, as well as significantly reduced 1/f noise. These devices may favourably be applied in low noise amplifiers.
Keywords :
bipolar transistors; electron device noise; random noise; 1/f noise; bipolar transistors; current gain fall off; low concentration emitter diffusion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800264
