Title :
Microwave noise modeling for InP-InGaAs HBTs
Author :
Gao, Jianjun ; Li, Xiuping ; Wang, Hong ; Boeck, Georg
Author_Institution :
Inst. of High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany
fDate :
4/1/2004 12:00:00 AM
Abstract :
Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5×5 μm2 emitter area over a wide range of bias points.
Keywords :
III-V semiconductors; capacitance; electric resistance; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; inductance; microwave bipolar transistors; semiconductor device models; semiconductor device noise; 20 GHz; HBT; InP double heterojunction bipolar transistors; InP-InGaAs; base-collector capacitance; inductances; microwave noise modeling; noise equivalent-circuit model; noise parameters; resistance; Capacitance; Circuit noise; Double heterojunction bipolar transistors; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit noise; Low-frequency noise; MMICs; Noise figure; Semiconductor device noise;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.825730
