Microwave noise modeling for InP-InGaAs HBTs

Author

Gao, Jianjun ; Li, Xiuping ; Wang, Hong ; Boeck, Georg

Author_Institution

Inst. of High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany

Volume

52

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

1264

Lastpage

1272

Abstract

Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5×5 μm² emitter area over a wide range of bias points.

Keywords

III-V semiconductors; capacitance; electric resistance; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; inductance; microwave bipolar transistors; semiconductor device models; semiconductor device noise; 20 GHz; HBT; InP double heterojunction bipolar transistors; InP-InGaAs; base-collector capacitance; inductances; microwave noise modeling; noise equivalent-circuit model; noise parameters; resistance; Capacitance; Circuit noise; Double heterojunction bipolar transistors; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit noise; Low-frequency noise; MMICs; Noise figure; Semiconductor device noise;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.825730

Filename

1284797