DocumentCode :
955799
Title :
Aging of Highly N-Doped 
-Ta Thin-Film Capacitors
-Ta Thin-Film CapacitorsAuthor :
Wyatt, Peter W.
Author_Institution :
Massachesetts Institute of Technology,Lexington, MA
Volume :
1
Issue :
2
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Firstpage :
148
Lastpage :
151
Abstract :
Conventional 
-Ta film capacitors change in value by about -0.4 percent over their lifetime. Their stability cannot be improved by short-term heat treatment because of damage to the oxide. Similar capacitors made from Ta containing 
10 atomic percent nitrogen can, however, be heat treated. This paper reports a test of the stability of such devices. The aging is much smaller, with a predicted value of -0.15 percent after 20 years at 65°C. The activation energy for this aging is 0.65 eV.
-Ta film capacitors change in value by about -0.4 percent over their lifetime. Their stability cannot be improved by short-term heat treatment because of damage to the oxide. Similar capacitors made from Ta containing 10 atomic percent nitrogen can, however, be heat treated. This paper reports a test of the stability of such devices. The aging is much smaller, with a predicted value of -0.15 percent after 20 years at 65°C. The activation energy for this aging is 0.65 eV.Keywords :
Component reliability; Tantalum devices; Thermal factors; Thin-film capacitors; Aging; Capacitance; Capacitors; Circuits; Dielectrics; Heat treatment; Nitrogen; Stability; Testing; Transistors;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/TCHMT.1978.1135269
Filename :
1135269
Link To Document :
