Title :
Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d.
Author :
Hirtz, J.P. ; Larivain, J.P. ; Duchemin, J.P. ; Pearsall, T.P. ; Bonnet, Marc
Author_Institution :
Thomson-CSF, LCR, Orsay, France
Abstract :
The first heteroepitaxy is reported of Ga0.47In0.53As on InP by low-pressure metalorganic chemical vapour deposition (m.o. c.v.d.). Triethylindium (t.e.i.) and triethylgallium (t.e.g) were used as group III sources, and arsine as the group V source. These Ga0.47In0.53As epilayers exhibit high electron mobility (7.74 cm2 V¿1 s¿1 for a total impurity concentration of 2.5 × 1016 cm¿3 at 300 K) and a photoluminescence efficiency comparable to l.p.e. layers. The lattice mismatch is only ¿a0/a0 ¿ 4 × 10¿4. Our mobility measurements indicate that m.o. c.v.d. Ga0.47In0.53As is a promising material for microwave device applications.
Keywords :
III-V semiconductors; carrier mobility; chemical vapour deposition; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; Ga0.47In0.53As; InP; electron mobility; epitaxial layers; impurity concentration; lattice mismatch; metal organic CVD; photoluminescence efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800290
