Aluminum Wire to Thick-Film Connections for High-Temperature Operation

Hybrid microcircuits in geothermal instrumentation must operate from room temperature to 300°C. Bond failure occurred during operation of initial geothermal circuits due to intermetallic growth at the aluminum wire-to-gold conductor interface. To remedy this problem, two wire bonding techniques have been qualified in high-temperature aging tests: 1) ultrasonic bonding of aluminum wire directly to modified fritless gold conductor inks (DuPont 9910, AVX 3520, and TFS A328) and 2) insertion of a I mil diffusion barrier pad between the thick film and the aluminum wire. Both systems allow 100-1000 h operation at 300°C. Three alloys of wire were tested: pure aluminum, aluminum with I percent silicon, and aluminum with 1 percent magnesium. The degradation rates differed greatly with pure aluminum being the least tolerant to temperature aging and wire with 1 percent silicon faring best. Because thick-film surfaces tend to be harder than thin-film surfaces, hardened aluminum wire (elongation 0.5 percent) formed bonds with less pad deformation and, consequently, with higher pull strengths than standard bonding wire (elongation 1-3 percent). Comparison of wire bonds aged at three temperatures (250, 300, and 350°C) demonstrated several orders of magnitude spread in degradation rates; for 1000-h bond lifetime, 300°C was found to be about the highest allowed operational temperature for direct bonding to gold. Disks of kovar and nickel of l-mil thickness and 30 mils diam were used as diffusion barriers between the gold and aluminum. Evaporated on one side of each disk was a 1 µm gold thin film for thermocompression bonding to the thick film; the other side received an evaporated aluminum film for wire bonding. Aging for 1000 h up to 350°C produced no increase in bond resistance for any of the three wire alloys tested. Some decrease in pull strength with time was noticed but was attributed to annealing of the wire.