DocumentCode :
956085
Title :
The Restructuring of Aluminum on Gallium Arsenide
Author :
Macpherson, Alan C. ; Day, Howard M.
Author_Institution :
Naval Research Lab.
Volume :
1
Issue :
4
fYear :
1978
fDate :
12/1/1978 12:00:00 AM
Firstpage :
432
Lastpage :
433
Abstract :
The restructuring of aluminum (Al) on GaAs has been observed on low-power GaAs field-effect transfers (FETs) and on special test structures. For 4 X 104heating and cooling cycles, temperature swings as low as 90°C produced restructuring. Restructuring is weakly dependent on deposition temperature, and no change in the Al resistance was observed.
Keywords :
Microwave FETs; Semiconductor device reliability; Aluminum; Cooling; FETs; Gallium arsenide; Heating; Optical films; Pulse measurements; Temperature; Testing; Thermal resistance;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/TCHMT.1978.1135300
Filename :
1135300
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=956085
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