Title :
Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes
Author :
Bai, Xiaogang ; Mcintosh, Dion ; Liu, Handin ; Campbell, Joe C.
Author_Institution :
Virginia Univ., Charlottesville
Abstract :
We report 4H-SiC avalanche photodiodes operated in Geiger mode for single photon detection at 265 nm. At room temperature, the single photon detection efficiency is 14% with a dark count probability of 1.7 x 10-4. Since the external quantum efficiency is 21% at 265 nm, it follows that 65% of the absorbed photons are counted as avalanche events. The jitter of the photodiodes is also characterized.
Keywords :
avalanche photodiodes; photodetectors; silicon compounds; Geiger-mode 4H-SiC avalanche photodiodes; SiC - Interface; dark count probability; jitter; single photon detection; ultraviolet single photon detection; wavelength 265 nm; Avalanche photodiodes; Dark current; Detectors; Electric breakdown; Helium; Jitter; Photodetectors; Silicon carbide; Temperature distribution; Voltage; Avalanche photodiodes; photodetector; silicon carbide; ultraviolet detector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.906830
