Title :
1.5¿1.6 ¿m GaInAsP/InP Integrated twin-guide lasers with first-order distributed Bragg reflectors
Author :
Utaka, K. ; Kobayashi, Kaoru ; Kishino, Katsumi ; Suematsu, Yasuharu
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
The room-temperature operation of 1.5¿1.6 ¿m GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors is reported. Single-longitudinal-mode oscillation was observed up to 1.4 times the threshold current. The temperature dependence of lasing wavelength was only 0.8 Å/degree.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; GaInAsP/InP integrated twin guide lasers; III-V semiconductors; first order distributed Bragg reflectors; lasing wavelength; single longitudinal mode oscillators; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800320
