Title :
Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors
Author :
Colace, Lorenzo ; Ferrara, Pasquale ; Assanto, Gaetano ; Fulgoni, Dom ; Nash, Lee
Author_Institution :
Univ. Roma Tre, Rome
Abstract :
We demonstrate near-infrared Ge-on-Si photodiodes designed to minimize the dark current density and fabricated by chemical vapor deposition. The p-i-n detectors exhibit record low dark currents of 7 nA at 1-V reverse bias with responsivities close to the theoretical maximum. An excellent performance is ascertained even for very low reverse voltages.
Keywords :
chemical vapour deposition; dark conductivity; elemental semiconductors; germanium; infrared detectors; p-i-n photodiodes; silicon; Ge-Si; chemical vapor deposition; current 7 nA; dark current density; germanium-on-silicon near-infrared detectors; photodiodes; voltage 1 V; Chemical vapor deposition; Dark current; Detectors; Doping; Hydrogen; Operational amplifiers; Optical amplifiers; Optical device fabrication; Optical receivers; PIN photodiodes; Germanium radiation detectors; infrared detectors; optoelectronic devices; photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.907578
