• DocumentCode
    956211
  • Title

    Relationship between power added efficiency and gate-drain avalanche in GaAs m.e.s.f.e.t.s

  • Author

    Wemple, S.H. ; Steinberger, M.L. ; Schlosser, W.O.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    16
  • Issue
    12
  • fYear
    1980
  • Firstpage
    459
  • Lastpage
    460
  • Abstract
    Pulse avalanche measurements in the transistor three-terminal configuration reveal a correlation between pulse gate-drain avalanche and power added efficiency. This result, in conjunction with earlier work, points to simple design principles that can be used to maximise efficiency.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; GaAs MESFET; III-V semiconductors; gate drain avalanche; power MESFET; power added efficiency; pulse avalanche measurements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800323
  • Filename
    4244092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956211