Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice

Author

Mallick, S. ; Banerjee, K. ; Ghosh, S. ; Rodriguez, J.B. ; Krishna, S.

Author_Institution

Lab. for Photonics & Spintronics, Chicago

Volume

19

Issue

22

fYear

2007

Firstpage

1843

Lastpage

1845

Abstract

InAs-GaSb strain layer superlattice p⁺-n^--n avalanche photodiodes (APDs) are fabricated using a newly introduced electron-beam aided zinc sulfide deposition. Temperature-dependent measurements were performed on 300 times 300 mum² mesa etched APDs. The effect of passivation was also studied on the diode characteristics and APD performances. Temperature-dependent gain strongly correlates with avalanche mechanism.

Keywords

II-VI semiconductors; III-V semiconductors; aluminium compounds; avalanche photodiodes; beryllium; electron beam deposition; etching; gallium compounds; indium compounds; passivation; semiconductor superlattices; silicon; wide band gap semiconductors; zinc compounds; Al_0.2Ga_0.8Sb - Interface; GaSb:Be - Interface; InAs:Si - Interface; ZnS - Interface; electron-beam aided zinc sulfide deposition; mesa etching; midwavelength infrared avalanche photodiode; passivation; strain layer superlattice; temperature-dependent gain; Avalanche photodiodes; Capacitive sensors; Etching; Laser sintering; Mercury (metals); Passivation; Radar detection; Superlattices; Tellurium; Zinc compounds; Avalanche photodiodes (APDs); bias voltage; midwavelength infrared (MWIR); multiplication gain; strain layer superlattice (SLS);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.908726

Filename

4367525