InGaAlAs Multiple-Quantum-Well Optical Phase Modulators Based on Carrier Depletion

Author

Ohe, Hideki ; Shimizu, Hiromasa ; Nakano, Yoshiaki

Author_Institution

Tokyo Univ., Tokyo

Volume

19

Issue

22

fYear

2007

Firstpage

1816

Lastpage

1818

Abstract

We fabricated carrier-depletion-type optical phase modulators which contain an InGaAlAs multiple-quantum well (MQW) in a p-n junction, and investigated their phase modulation characteristics at the wavelengths of 1.55-1.62 mum under reverse biased conditions. Fabricated devices showed large modulation efficiencies up to 89deg/mm/V and smaller wavelength-dependence than that of conventional MQW phase modulators. Carrier-depletion-type optical phase modulators are attractive for optical integrated devices such as optical matrix switches for future wavelength-division-multiplexing photonic networks.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical fibre networks; optical modulation; optical switches; phase modulation; quantum well devices; wavelength division multiplexing; InGaAlAs; carrier depletion; multiple-quantum-well modulators; optical integrated devices; optical matrix switches; optical modulators; p-n junction; phase modulators; photonic networks; reverse biased conditions; wavelength 1.55 mum to 1.62 mum; wavelength-division-multiplexing; Integrated optics; Optical devices; Optical fiber networks; Optical modulation; Optical refraction; Optical transmitters; Optical variables control; P-n junctions; Phase modulation; Quantum well devices; Carrier depletion; InGaAlAs multiple-quantum well (MQW); optical switch; phase modulator; wavelength- dependence;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.907566

Filename

4367526