• DocumentCode
    956276
  • Title

    Impact ionisation in multilayered heterojunction structures

  • Author

    Chin, Richard ; Holonyak, Nick ; Stillman, G.E. ; Tang, Jean Y. ; Hess, K.

  • Author_Institution
    University of Illinois at Urbana-Champaign, Department of Electrical Engineering & Materials Research Laboratory, Urbana, USA
  • Volume
    16
  • Issue
    12
  • fYear
    1980
  • Firstpage
    467
  • Lastpage
    469
  • Abstract
    Calculations are reported showing that in multilayered heterojunction structures the effective impact ionisation rates for electrons and holes can be very different, even if they are the same in the basic bulk materials. The reason for this is the difference in the band-edge discontinuities for electrons and holes and the lower phonon mean free path for holes in quantum well structures.
  • Keywords
    carrier mean free path; impact ionisation; p-n heterojunctions; impact ionisation; mean free path; multilayered heterojunction structures; quantum well structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800329
  • Filename
    4244098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956276