Title :
GaAs MESFET demodulates gigabit signal rates from GaAlAs injection laser
Author :
Osterwalder, J.M. ; Rickett, B.J.
Author_Institution :
General Dynamics Electronics Division, San Diego, CA
fDate :
6/1/1979 12:00:00 AM
Abstract :
This letter describes the experimental results of an optical transmission link with modulation rates up to 4 GHz. The transmitter consists of an FET driven GaAlAs injection laser emitting at a 8500 Å wavelength. The receiver makes use of a GaAs MESFET chip which is compared with a standard silicon avalanche photodiode demodulator.
Keywords :
Avalanche photodiodes; Demodulation; FETs; Gallium arsenide; MESFETs; Optical modulation; Optical receivers; Optical transmitters; Silicon; Stimulated emission;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1979.11368
