An X-band, high power dielectric resonator oscillator for future military systems

Author

Mizan, Muhammad ; Sturzebecher, Dana ; Higgins, Thomas ; Paolella, Arthur

Author_Institution

US Army Res. Lab., Fort Monmouth, NJ, USA

Volume

40

Issue

5

fYear

1993

Firstpage

483

Lastpage

487

Abstract

A 9.0-GHz dielectric resonator oscillator (DRO), generating a CW output power of 2.5 W at room temperature, has been designed and fabricated using a high-power GaAs MESFET and a dielectric resonator (DR) in a parallel feedback configuration. The oscillator exhibited a frequency stability of better than 130 ppm, without any temperature compensation, over the range -50 degrees C to +50 degrees C. The output power varied from +35 dBm (3.2 W) at -50 degrees C to +33 dBm (2 W) at +50 degrees C. The single-sideband phase noise levels were measured and found to be -105 and -135 dBc/Hz, at 10- and 100-kHz carrier offset frequencies, respectively. The oscillator output was then fed into a single-stage high-power MESFET amplifier, resulting in a total RF power output of 6.5 W. The overall DC to RF conversion efficiency of the 6.5-W unit was approximately 15.3%.<>

Keywords

dielectric resonators; feedback; frequency stability; microwave oscillators; military equipment; solid-state microwave circuits; -50 to 50 degC; 15.3 percent; 2 to 6.5 W; CW output power; DRO; GaAs; MESFET; SHF; X-band; dielectric resonator oscillator; frequency stability; high power; military systems; parallel feedback configuration; Dielectrics; Gallium arsenide; MESFETs; Oscillators; Output feedback; Phase noise; Power generation; Radio frequency; Stability; Temperature distribution;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.238099

Filename

238099