Comparison of GaN HEMTs on Diamond and SiC Substrates

Author

Felbinger, Jonathan G. ; Chandra, M.V.S. ; Sun, Yunju ; Eastman, Lester F. ; Wasserbauer, John ; Faili, Firooz ; Babic, Dubravko ; Francis, Daniel ; Ejeckam, Felix

Author_Institution

Cornell Univ., Ithaca

Volume

28

Issue

11

fYear

2007

Firstpage

948

Lastpage

950

Abstract

The performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.

Keywords

III-V semiconductors; diamond; gallium compounds; high electron mobility transistors; microwave field effect transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN - Interface; HEMT; SiC - Surface; X band power measurements; diamond; frequency 10 GHz; frequency 27.4 GHz; high electron mobility transistors; power density; thermal power measurements; Aluminum gallium nitride; Atomic force microscopy; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Substrates; Temperature; Thermal conductivity; $X$ -band; GaN on diamond; high-electron-mobility transistor (HEMT); microwave power; thermal effects in AlGaN;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.908490

Filename

4367547