Title :
Comparison of GaN HEMTs on Diamond and SiC Substrates
Author :
Felbinger, Jonathan G. ; Chandra, M.V.S. ; Sun, Yunju ; Eastman, Lester F. ; Wasserbauer, John ; Faili, Firooz ; Babic, Dubravko ; Francis, Daniel ; Ejeckam, Felix
Author_Institution :
Cornell Univ., Ithaca
Abstract :
The performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.
Keywords :
III-V semiconductors; diamond; gallium compounds; high electron mobility transistors; microwave field effect transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN - Interface; HEMT; SiC - Surface; X band power measurements; diamond; frequency 10 GHz; frequency 27.4 GHz; high electron mobility transistors; power density; thermal power measurements; Aluminum gallium nitride; Atomic force microscopy; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Substrates; Temperature; Thermal conductivity; $X$ -band; GaN on diamond; high-electron-mobility transistor (HEMT); microwave power; thermal effects in AlGaN;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.908490
