DocumentCode :
956510
Title :
Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors
Author :
Huang, Fengyi ; Lu, Jingxue ; Zhu, Yufeng ; Jiang, Nan ; Wang, Xianchao ; Chi, Yusong
Author_Institution :
Southeast Univ., Nanjing
Volume :
28
Issue :
11
fYear :
2007
Firstpage :
1025
Lastpage :
1028
Abstract :
We demonstrate that, in addition to the conventional high-order parasitic effects such as skin and proximity effect, as well as substrate coupling, a novel term of substrate parasitic inductance needs to be introduced in the equivalent circuit for silicon-based transmission lines and on-chip spiral inductors in order to fully describe the nonlinear features of substrate-characteristic functions at a high frequency. The present model is verified for inductors fabricated using a 0.18-mum CMOS process.
Keywords :
CMOS integrated circuits; integrated circuit modelling; transmission lines; CMOS; equivalent circuit; on-chip inductors; on-chip spiral inductors; proximity effect; silicon-based transmission lines; size 0.18 mum; skin effect; substrate coupling; substrate parasitic inductance effect; Coupling circuits; Distributed parameter circuits; Equivalent circuits; Frequency; Inductance; Inductors; Proximity effect; Skin; Spirals; Transmission lines; Inductor; parasitic effect; silicon-based transmission line; substrate inductance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.906800
Filename :
4367552
Link To Document :
بازگشت