DocumentCode :
956513
Title :
Use of Ga in metal-GaAs contacts to eliminate large As loss peaks
Author :
Sebestyen, T. ; Mojzes, I. ; Szigethy, D.
Author_Institution :
Hungarian Academy of Sciences, Research Institute for Technical Physics, Budapest, Hungary
Volume :
16
Issue :
13
fYear :
1980
Firstpage :
504
Lastpage :
505
Abstract :
Arsenic losses from Schottky and ohmic metal contacts to GaAs were quantitatively determined by a quadrupole mass spectrometer as a function of linearly increasing temperature. By adding gallium to the contact metal, the giant peaks found in the arsenic losses could be completely eliminated and the arsenic evaporation losses greatly reduced.
Keywords :
III-V semiconductors; Schottky-barrier diodes; arsenic; gallium; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; As loss; Ga; GaAs; Schottky contacts; evaporation losses; ohmic metal contacts; quadrupole mass spectrometer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800352
Filename :
4244122
Link To Document :
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