Title :
Use of Ga in metal-GaAs contacts to eliminate large As loss peaks
Author :
Sebestyen, T. ; Mojzes, I. ; Szigethy, D.
Author_Institution :
Hungarian Academy of Sciences, Research Institute for Technical Physics, Budapest, Hungary
Abstract :
Arsenic losses from Schottky and ohmic metal contacts to GaAs were quantitatively determined by a quadrupole mass spectrometer as a function of linearly increasing temperature. By adding gallium to the contact metal, the giant peaks found in the arsenic losses could be completely eliminated and the arsenic evaporation losses greatly reduced.
Keywords :
III-V semiconductors; Schottky-barrier diodes; arsenic; gallium; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; As loss; Ga; GaAs; Schottky contacts; evaporation losses; ohmic metal contacts; quadrupole mass spectrometer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800352