Title :
Laser annealing of low dose Se-implanted GaAs studied by d.l.t.s.
Author :
Emerson, Neil G. ; Sealy, B.J.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
Deep level transient spectroscopy (d.l.t.s.) has been applied to the study of deep levels in GaAs following post-implantation annealing using a Q-switched ruby laser. High concentrations (> 1015 cm¿3) of deep trapping levels are observed in the laser melt region using a forward-bias voltage pulse.
Keywords :
annealing; deep levels; ion implantation; semiconductor doping; GaAs:Se; Q switched ruby laser; Se implantation; deep level transient spectroscopy; deep trapping levels; forward bias voltage pulse; laser annealing; laser melt region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800358
