• DocumentCode
    956569
  • Title

    Laser annealing of low dose Se-implanted GaAs studied by d.l.t.s.

  • Author

    Emerson, Neil G. ; Sealy, B.J.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    16
  • Issue
    13
  • fYear
    1980
  • Firstpage
    512
  • Lastpage
    514
  • Abstract
    Deep level transient spectroscopy (d.l.t.s.) has been applied to the study of deep levels in GaAs following post-implantation annealing using a Q-switched ruby laser. High concentrations (> 1015 cm¿3) of deep trapping levels are observed in the laser melt region using a forward-bias voltage pulse.
  • Keywords
    annealing; deep levels; ion implantation; semiconductor doping; GaAs:Se; Q switched ruby laser; Se implantation; deep level transient spectroscopy; deep trapping levels; forward bias voltage pulse; laser annealing; laser melt region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800358
  • Filename
    4244128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956569