• DocumentCode
    956589
  • Title

    1.5¿1.7 ¿m v.p.e. InGaAsP/InP c.w. lasers

  • Author

    Olsen, G.H. ; Zamerowski, T.J. ; Digiuseppe, N.J.

  • Author_Institution
    RCA Laboratories, Princeton, USA
  • Volume
    16
  • Issue
    13
  • fYear
    1980
  • Firstpage
    516
  • Lastpage
    518
  • Abstract
    Room temperature c.w. lasing operation has been achieved at 1.55 ¿m with InGaAsP/InP devices and at 1.65 ¿m with InGaAs/InP devices prepared via vapour-phase epitaxy. Lasing threshold currents vary as exp (T ¿ 20)/T0 with 40<T0 <60°C.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; CW lasing operation; InGaAsP-InP devices; vapour phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800361
  • Filename
    4244131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956589