Title :
1.5¿1.7 ¿m v.p.e. InGaAsP/InP c.w. lasers
Author :
Olsen, G.H. ; Zamerowski, T.J. ; Digiuseppe, N.J.
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
Room temperature c.w. lasing operation has been achieved at 1.55 ¿m with InGaAsP/InP devices and at 1.65 ¿m with InGaAs/InP devices prepared via vapour-phase epitaxy. Lasing threshold currents vary as exp (T ¿ 20)/T0 with 40<T0 <60°C.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; CW lasing operation; InGaAsP-InP devices; vapour phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800361
