Title :
GaAs n+-p¿-n+ ballistic structure
Author :
Shur, Michael S. ; Eastman, L.F.
Author_Institution :
University of Minnesota, Department of Electrical Engineering, Minneapolis, USA
Abstract :
Potential distribution and I/V characteristics of short n+-p¿-n+ devices are calculated assuming ballistic electron transport (no collisions). The results of the calculation are in good agreement with experimental results for submicrometre GaAs n+-p¿-n+ structures.
Keywords :
III-V semiconductors; gallium arsenide; p-n homojunctions; GaAs; I-V characteristics; ballistic electron transport; n+-p--n+ ballistic structure; potential distribution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800365
