Title :
Ballistic electron motion in GaAs at room temperature
Author :
Eastman, L.F. ; Stall, Rick ; Woodard, D. ; Dandekar, N. ; Wood, C.E.C. ; Shur, Michael S. ; Board, K.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
Experimental current/voltage characteristics are described for n+-n-n+ and n+-p¿-n+ GaAs structures. It is evident from the results that the electron transport is mainly ballistic in nature.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; heavily doped semiconductors; p-n homojunctions; GaAs; ballistic electron motion; current voltage characteristics; electron transport; n+-n-n+ GaAs structure; n+-p--n+ GaAs structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800366
