• DocumentCode
    956638
  • Title

    Ballistic electron motion in GaAs at room temperature

  • Author

    Eastman, L.F. ; Stall, Rick ; Woodard, D. ; Dandekar, N. ; Wood, C.E.C. ; Shur, Michael S. ; Board, K.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    16
  • Issue
    13
  • fYear
    1980
  • Firstpage
    524
  • Lastpage
    525
  • Abstract
    Experimental current/voltage characteristics are described for n+-n-n+ and n+-p¿-n+ GaAs structures. It is evident from the results that the electron transport is mainly ballistic in nature.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; heavily doped semiconductors; p-n homojunctions; GaAs; ballistic electron motion; current voltage characteristics; electron transport; n+-n-n+ GaAs structure; n+-p--n+ GaAs structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800366
  • Filename
    4244136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956638