DocumentCode :
956707
Title :
Thin-Film Al-Al2O3-Al Capacitors
Author :
Martin, Jacob H.
Author_Institution :
Sprague Electric Co.
Volume :
1
Issue :
1
fYear :
1965
fDate :
6/1/1965 12:00:00 AM
Firstpage :
267
Lastpage :
276
Abstract :
A process has been developed to produce A1-Al203-Al capacitors with good yields and suitable properties for use in thin-film circuitry. Tests were conducted to determine the effects that a number of variables have on production yields and capacitor characteristics. This paper reports the optimum found for each variable. The largest improvement inyields was brought about by following proper cleaning procedures and controlling dust on the substrate prior to insertion in the vacuum system and during pumpdown.
Keywords :
Aluminum deposition; Anodization cycle; Capacitor yields; Cleaning cycles; Counter electrode material; Fabrication variable; Step stress test results; Substrates; Thin-film capacitors; Thin-film circuitry; Wet anodized aluminum; Capacitors; Circuit testing; Cleaning; Glass; Production; Rough surfaces; Substrates; Surface roughness; Thin film circuits; Transistors;
fLanguage :
English
Journal_Title :
Parts, Materials and Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9502
Type :
jour
DOI :
10.1109/TPMP.1965.1135364
Filename :
1135364
Link To Document :
بازگشت