A Phase Change Memory Compact Model for Multilevel Applications

Author

Ventrice, D. ; Fantini, P. ; Redaelli, Andrea ; Pirovano, A. ; Benvenuti, A. ; Pellizzer, F.

Author_Institution

Adv. Res. & Dev. - Flash Memory Group, Agrate Brianza

Volume

28

Issue

11

fYear

2007

Firstpage

973

Lastpage

975

Abstract

In this letter, we show a compact model that describes the main electrical features of phase change memory (PCM) devices. The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions. For arbitrary programming pulses, the model is able to generate intermediate states with mixed phase distributions and, thus, with resistance values between the SET and RESET ones. The proposed model is therefore a precious tool for the design of multilevel PCM applications.

Keywords

integrated circuit modelling; integrated memory circuits; phase change materials; RESET state; electrical features; multilevel applications; phase change memory compact model; Amorphous materials; Crystallization; Nonvolatile memory; Phase change materials; Phase change memory; Physics; Pulse generation; Resistors; Temperature; Voltage; Compact model; multilevel (ML); nonvolatile memory; phase change memory (PCM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.907288

Filename

4367575