Title :
The Leakage Current of the Schottky Contact on the Mesa Edge of AlGaN/GaN Heterostructure
Author :
Xu, Chuan ; Wang, Jinyan ; Chen, Hongwei ; Xu, Fujun ; Dong, Zhihua ; Hao, Yilong ; Wen, Cheng P.
Author_Institution :
Peking Univ., Beijing
Abstract :
A test structure, which is called the ridge-furrow structure, is used to evaluate the leakage current of the Schottky contact on the mesa edge of an AlGaN/GaN heterostructure. The mesa edge leakage currents were measured at different temperatures from 300 to 500 K and analyzed. The conduction-band-edge energy distribution at the mesa edge is simulated by the Integrated Systems Engineering Technology Computer-Aided Design. Based on the simulation results, the electric field strength can be obtained as a function of reverse bias voltage. The mesa edge leakage current is found to agree with the predicted characteristics, which is based on the Frenkel-Poole emission model. Therefore, we believe that the Frenkel-Poole emission dominates the mesa edge leakage at temperatures between 300 and 500 K.
Keywords :
CAD; III-V semiconductors; Poole-Frenkel effect; Schottky barriers; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; AlGaN-GaN - Interface; Frenkel-Poole emission model; Schottky contact; computer-aided design; conduction-band-edge energy distribution; heterostructure field effect transistor; integrated systems engineering technology; leakage current; mesa edge; reverse bias voltage; ridge-furrow structure; temperature 300 K to 500 K; Aluminum gallium nitride; Computational modeling; Computer simulation; Current measurement; Design engineering; Gallium nitride; Leakage current; Schottky barriers; Temperature measurement; Testing; AlGaN/GaN; Frenkel–Poole; characteristic electric field strength; leakage current; mesa edge; ridge-furrow structure;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.906932
